NTD60N02R Overview
NTD60N02R Power MOSFET 62 A, 25 V, N−Channel, DPAK.
NTD60N02R Key Features
- Planar HD3e Process for Fast Switching Performance
- Low RDS(on) to Minimize Conduction Loss
- Low Ciss to Minimize Driver Loss
- Low Gate Charge
- Pb-Free Packages are Available
- Continuous
- Continuous @ TA = 25°C
- Continuous @ TA = 25°C
- 55 to °C 175
- Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10.0 Vdc, IL = 11 Apk, L = 1.0 mH, RG = 25 W)