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NTD60N02R
Power MOSFET
62 A, 25 V, N−Channel, DPAK
Features
• Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
• Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance Junction−to−Case
Total Power Dissipation @ TC = 25°C Drain Current
Continuous @ TC = 25°C, Chip Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires
VDSS
VGS
RqJC PD
ID ID ID
25 Vdc
±20 Vdc
2.
NTD60N02R Datasheet
