2N5550 Description
2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon.
2N5550 Key Features
- These are Pb-Free Devices
- Emitter Voltage
- Base Voltage
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 5
- Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0 )
- Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
- Collector-Emitter Saturation Voltage