CNY171TM Description
The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in−line package.
CNY171TM Key Features
- High BVCEO: 70 V Minimum
- Closely Matched Current Transfer Ratio (CTR) Minimizes
- Current Transfer Ratio In Select Groups
- Safety and Regulatory Approvals
CNY171TM Applications
- maximum values allowed in the event of a failure