Part FCP190N65S3
Description N-Channel MOSFET
Category MOSFET
Manufacturer onsemi
Size 373.77 KB
onsemi
FCP190N65S3

Overview

  • 700 V @ TJ = 150°C
  • Typ. RDS(on) = 159 mW
  • Ultra Low Gate Charge (Typ. Qg = 33 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)
  • 100% Avalanche Tested
  • These Devices are Pb-Free and are RoHS Compliant