FDC6321C Description
These dual N & P Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications.
FDC6321C Key Features
- N-Channel 0.68 A, 25 V
- P-Channel -0.46 A, -25 V
- Very Low Level Gate Drive Requirements Allowing Direct
- Gate-Source Zener for ESD Ruggedness. >6 kV Human Body Model
- Replace Multiple Dual NPN & PNP Digital Transistors
- This is a Pb-Free Device
- Rev. 3