FDC638P Description
This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
FDC638P Key Features
- 4.5 A, -20 V
- RDS(on) = 48 mW @ VGS = -4.5 V
- RDS(on) = 65 mW @ VGS = -2.5 V
- Low Gate Charge (10 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt-6 Package: Small Footprint (72% Smaller than
- This Device is Pb-Free, Halide Free and is RoHS pliant