FDC6401N Description
This Dual N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDC6401N Key Features
- 3.0 A, 20 V
- Low Gate Charge (3.3 nC)
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- This is a Pb-Free and Halide Free Device