FDC86244 Description
This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
FDC86244 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A
- Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb-Free, Halogen Free/BFR Free and is RoHS