FDD3860 Description
This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications DC-AC Conversion Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
FDD3860 Key Features
- Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
- High Performance Trench Technology for Extremely Low
- 100% UIL Tested
- RoHS pliant