FDD4243-G Description
This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications.
FDD4243-G Key Features
- Max RDS(on) = 44 mW at VGS = -10 V, ID = -6.7 A
- Max RDS(on) = 64 mW at VGS = -4.5 V, ID = -5.5 A
- High Performance Trench Technology for Extremely Low rDS(on)
- Pb-Free, Halide Free and RoHS pliant