FDD5353 Description
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDD5353 Key Features
- Max RDS(on) = 12.3 mW at VGS = 10 V, ID = 10.7 A
- Max RDS(on) = 15.4 mW at VGS = 4.5 V, ID = 9.5 A
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and RoHS pliant