Download FDD5680 Datasheet PDF
FDD5680 page 2
Page 2
FDD5680 page 3
Page 3

FDD5680 Description

This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Applications DC/DC converter Motor drives.

FDD5680 Key Features

  • 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V
  • Low gate charge (33nC typical)
  • Fast switching speed
  • High performance trench technology for extremely