FDG316P Description
This P−Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
FDG316P Key Features
- 1.6 A, -30 V
- RDS(ON) = 0.19 W @ VGS = -10 V
- RDS(ON) = 0.30 W @ VGS = -4.5 V
- Low Gate Charge (3.5 nC Typical)
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70-6 Surface Mount Package
- These Devices are Pb-Free and are RoHS pliant