FDG328P Description
This P−Channel 2.5 V specified MOSFET is produced in a rugged gate version of ON Semiconductor’s advanced POWERTRENCH process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5 V 12 V).
FDG328P Key Features
- 1.5 A, -20 V
- RDS(ON) = 0.145 W @ VGS = -4.5 V
- RDS(ON) = 0.210 W @ VGS = -2.5 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70-6 Surface Mount Package
- These Devices are Pb-Free and are RoHS pliant