FDG6316P Description
This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications.
FDG6316P Key Features
- 0.7 A, -12 V
- RDS(ON) = 270 mW @ VGS = -4.5 V
- RDS(ON) = 360 mW @ VGS = -2.5 V
- RDS(ON) = 650 mW @ VGS = -1.8 V
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70-6 Surface Mount Package
- These Devices are Pb-Free and are RoHS pliant