FDMC86116LZ Description
This N−Channel logic Level MOSFETs are produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. G−S zener has been added to enhance ESD voltage level.
FDMC86116LZ Key Features
- Max RDS(on) = 103 mW at VGS = 10 V, ID = 3.3 A
- Max RDS(on) = 153 mW at VGS = 4.5 V, ID = 2.7 A
- HBM ESD Protection Level > 3 kV Typical (Note 1)
- 100% UIL Tested
- These Devices are Pb-Free and are RoHS pliant