FDMC8622 Description
This N−Channel MOSFET is produced using onsemi‘s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
FDMC8622 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 56 mW at VGS = 10 V, ID = 4 A
- Max rDS(on) = 90 mW at VGS = 6 V, ID = 3 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
- 100% UIL Tested
- This Device is Pb-Free and is ROHS pliant
- Rev. 3
- 55 to +150