FDMC86259P Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDMC86259P Key Features
- Max rDS(on) = 107 mW at VGS = -10 V, ID = -3 A
- Max rDS(on) = 137 mW at VGS = -6 V, ID = -2,7 A
- Very Low RDS-on Mid Voltage P Channel Silicon Technology
- This Product is Optimised for Fast Switching