FDMC86340ET80 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMC86340ET80 Key Features
- Extended TJ Rating to 175°C
- Shielded Gate MOSFET Technology
- Max rDS(on) = 6.5 mW at VGS = 10 V, ID = 14 A
- Max rDS(on) = 8.5 mW at VGS = 8 V, ID = 12 A
- High Performance Technology for Extremely Low rDS(on)
- Termination is Lead-free
- RoHS pliant