FDMC8854 Description
This N−Channel MOSFET is a rugged gate version of onsemi’s advanced Power Trench process. It has been optimized for power management applications.
FDMC8854 Key Features
- Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
- Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A
- Low Profile
- 1 mm Max in Power 33
- This Device is Pb-Free, Halide Free and is RoHS pliant