FDME820NZT Description
This Single N−Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 1.8 V on special MicroFETt leadframe.
FDME820NZT Key Features
- Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A
- Max RDS(ON) = 24 mW at VGS = 2.5 V, ID = 7.5 A
- Max RDS(ON) = 32 mW at VGS = 1.8 V, ID = 7 A
- Low Profile
- 0.55 mm maximum
- in the New Package MicroFET
- HBM ESD Protection Level > 2.5 kV (Note 3)
- Free from Halogenated pounds and Antimony Oxides
- RoHS pliant