FDMS030N06B Description
This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
FDMS030N06B Key Features
- RDS(on) = 2.4 m (Typ) at VGS = 10 V, ID = 50 A
- Advanced Package and Silicon bination for Low RDS(on)
- Fast Switching Speed
- 100% UIL Tested
- RoHS pliant
FDMS030N06B Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit