FDMS039N08B Description
This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.
FDMS039N08B Key Features
- Max RDS(on) = 3.2 mW (Typ.) @ VGS = 10 V, ID = 50 A
- Low FOM RDS(on)
- Low Reverse Recovery Charge, Qrr = 80 nC
- Soft Reverse Recovery Body Diode
- Enables Highly Efficiency in Synchronous Rectification
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant
FDMS039N08B Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit