FDMS3500 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDMS3500 Key Features
- Max RDS(on) = 14.5 mW at VGS = 10 V, ID = 11.5 A
- Max RDS(on) = 16.3 mW at VGS = 4.5 V, ID = 10 A
- Advanced Package and Silicon bination for Low RDS(on)
- MSL1 Robust Package Design
- 100% UIL Tested
- RoHS pliant