FDMS86163P Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
FDMS86163P Key Features
- Max rDS(on) = 22 mW at VGS = -10 V, ID = -7.9 A
- Max rDS(on) = 30 mW at VGS = -6 V, ID = -5.9 A
- Very Low RDS-on Mid Voltage P-Channel Silicon Technology
- This Product is Optimised for Fast Switching