FDN306P Description
This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications.
FDN306P Key Features
- 2.6 A, -12 V RDS(on) = 40 mW @ VGS = -4.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(on)
- SUPERSOTt-3 Provides Low RDS(on) and 30% Higher Power
- This is a Pb-Free and Halide Free Device