FDS8978 Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
FDS8978 Key Features
- rDS(on) = 18 mW, VGS = 10 V, ID = 7.5 A
- rDS(on) = 21 mW, VGS = 4.5 V, ID = 6.9 A
- High Performance Trench Technology for Extremely Low rDS(on)
- Low Gate Charge
- High Power and Current Handling Capability
- 100% Rg Tested
- These Devices are Pb-Free and are RoHS pliant