MJD18002D2 Description
MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there...
MJD18002D2 Key Features
- Low Base Drive Requirement
- High Peak DC Current Gain (55 Typical) @ IC = 100 mA
- Extremely Low Storage Time Min/Max Guarantees Due to the
- Integrated Collector-Emitter Free Wheeling Diode
- Fully Characterized and Guaranteed Dynamic VCEsat
- Characteristics Make It Suitable for PFC Application
- ESD Ratings: Human Body Model, 3B u 8000 V
- Six Sigma® Process Providing Tight and Reproductible Parameter
- Pb-Free Package is Available
- Continuous Collector Current