MMFT3055ET1 Description
MMFT3055E Power MOSFET 1.7 Amp, 60 Volts N−Channel TMOS E−FETt SOT−223 This advanced E−FET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and mutation modes. This new energy efficient device also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, dc−dc converters and PWM motor controls, these...
MMFT3055ET1 Key Features
- Silicon Gate for Fast Switching Speeds
- Low RDS(on)
- 0.15 Ω max
- The SOT-223 Package can be Soldered Using Wave or Reflow. The
- Available in 12 mm Tape and Reel
- Continuous Drain Current
- Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C
- 65 to 150
- Starting TJ = 25°C (VDD = 60 Vdc, VGS = 10 Vdc, Peak IL = 1.7 Apk, L = 0.2 mH, RG = 25 Ω )
- Junction to Ambient (surface mounted)
MMFT3055ET1 Applications
- Silicon Gate for Fast Switching Speeds