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MMFT107T1 - Power MOSFET

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MMFT107T1 Preferred Device Power MOSFET 250 mA, 200 Volts N−Channel SOT−223 This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc converters, solenoid and relay drivers. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • Silicon Gate for Fast Switching Speeds • Low Drive Requirement • The SOT−223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Non−Repetitive Drain Current Total Power Dissipation @ TA = 25°C (Note 1.