Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Medium Power Field Effect Transistor
N- Channel Enhancement- Mode Silicon Gate TMOS SOT- 223 for Surface Mount
This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dc- dc converters, solenoid and relay drivers. The device is housed in the SOT- 223 package which is designed for medium power surface mount applications.
- Silicon Gate for Fast Switching Speeds
- RDS(on) = 14 Ohm Max
- Low Drive Requirement
- The SOT- 223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating...
