| Part Number | MMFT107T1 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MMFT107T1
Preferred Device
Power MOSFET 250 mA, 200 Volts
N−Channel SOT−223
This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc−dc conv.
156
°C/W
Maximum Temperature for Soldering Purposes Time in Solder Bath
TL
260
°C
10
Sec
1. Device mounted on FR *4 glass epoxy printed circuit using minimum recommended footprint. 250 mA 200 VOLTS RDS(on) = 14 W N *Channel D G S MARKING DIAGRAM 1 2 3 4 TO *261AA CASE 31. |
MMFT107T1 Datasheet and Specifications PDF
The MMFT107T1 is a Power MOSFET.
Key Specifications
| Package | TO-252-3 |
|---|---|
| Mount Type | Surface Mount |
| Max Operating Temp | 150 °C |
| Part Number | MMFT107T1 Datasheet |
|---|---|
| Description | MEDIUM POWER MOSFET |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT107T1/D
Medium Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount
This TMOS medium.
ent Total Power Dissipation @ TA = 25°C(1) Derate above 25°C Operating and Storage Temperature Range 1 GATE 3 SOURCE Symbol VDSS VGS ID PD TJ, Tstg 2,4 DRAIN
MMFT107T1
Motorola Preferred Device
MEDIUM POWER TMOS FET 250 mA, 200 VOLTS RDS(on) = 14 OHM MAX
®
4 1
2 3
CASE 318E *04, STYLE 3 TO *261AA. |