MTB15N06V Description
MTB15N06V Designer’s™ Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate TMOS V is a new technology designed to achieve an on−resistance area product about one−half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E−FET designs, TMOS V is designed to...
MTB15N06V Key Features
- On-resistance Area Product about One-half that of Standard
- Faster Switching than E-FET Predecessors
- Avalanche Energy Specified
- IDSS and VDS(on) Specified at Elevated Temperature
- Static Parameters are the Same for both TMOS V and TMOS E-FET
- Surface Mount Package Available in 16 mm 13-inch/2500 Unit Tape
- Rev. 3
- Continuous Gate-Source Voltage
- Non-Repetitive (tp ≤ 10 ms)
- Continuous @ 25°C Drain Current