NCP58922 Description
Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mW, 18 A, TQFN26 NCP58922 The NCP58922 integrates a high−performance, high frequency, Silicon (Si) driver and a 650 V, 78 mW Gallium−Nitride (GaN) High Electron Mobility Transistors (HEMT) in a single switch structure. The powerful bination of the Si Driver and power GaN HEMT Switch provides superior performance pared to discrete solution GaN HEMT and...
NCP58922 Key Features
- 650 V 78 mW GaN HEMT with Integrated Driver
- 30 ns Typical Driver Propagation Delay
- 8x8 mm TQFN26 Package Minimizes Parasitic Inductances
- 2.75 mm Creepage Distance for Maximum Reliability
- Driver Turn-on Process is Adjustable via External Resistor, which
- GDS Logic Input, that Switches Driver Strength to Easy
- 6.0 V Driver Clamp Voltage Regulator
- TTL patible Schmitt Trigger and Rail-to-rail PWM Input
- UVLO Protections for VDD and VDR Supplies
- Up to 200 V/ns dV/dt Slew Rate Transient Immunity