NTBS2D7N06M7 Description
NTBS2D7N06M7 N‐Channel PowerTrench) MOSFET 60 V, 110 A, 2.7.
NTBS2D7N06M7 Key Features
- Typical RDS(on) = 2.2 mW at VGS = 10 V, ID = 80 A
- Typical Qg(tot) = 80 nC at VGS = 10 V, ID = 80 A
- UIS Capability
- These Devices are Pb-Free and are RoHS pliant