NTTFS6H860N Description
MOSFET - Power, Single N-Channel 80 V, 21.1 mW, 33 A NTTFS6H860N.
NTTFS6H860N Key Features
- Small Footprint (3.3 x 3.3 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- These Devices are Pb-Free and are RoHS pliant
- Steady State (Note 3)
- Steady State (Note 3)
- Rev. 1