NVMFS5C410N Description
MOSFET Power, Single N-Channel 40 V, 0.92 mW, 300 A NVMFS5C410N.
NVMFS5C410N Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS5C410NWF
- Wettable Flank Option for Enhanced Optical
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- 55 to C +175
- Steady State
- Steady State (Note 2)