Datasheet Summary
DATA SHEET .onsemi.
MOSFET
- Power, Single N-Channel
40 V, 0.82 mW, 330 A
V(BR)DSS 40 V
RDS(ON) MAX 0.82 mW @ 10 V 1.2 mW @ 4.5 V
ID MAX 330 A
D (5,6)
Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS5C410NLWF
- Wettable Flank Option for Enhanced Optical
Inspection
- AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Symbol
Parameter
Value Unit
VDSS Drain- to- Source Voltage
VGS Gate- to- Source Voltage
20
Continuous Drain
Current...