NVMFS5C410N Datasheet | onsemi

DATA SHEET .onsemi. MOSFET - Power, Single N-Channel 40 V, 0.92 mW, 300 A Features - Small Footprint (5x6 mm) for pact Design - Low RDS(on) to Minimize Conduction Losses - Low QG and Capacitance to Minimize Driver Losses - NVMFS5C410NWF - Wettable Flank Option for Enhanced Optical Inspection - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are RoHS pliant MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Value Unit Drain- to- Source Voltage Gate- to- Source Voltage 20 Continuous Drain Current RqJC (Notes 1, 3) TC = 25C Steady TC = 100C 212 Power Dissipation RqJC (Note 1) State TC = 25C TC =...