NVMFS6H836N Description
DATA SHEET .onsemi. MOSFET - Power, Single N-Channel 80 V, 6.7 mW, 80 A NVMFS6H836N V(BR)DSS 80 V RDS(ON) MAX 6.7 mW @ 10 V ID MAX 80 A.
NVMFS6H836N Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- NVMFS6H836NWF
- Wettable Flank Option for Enhanced Optical
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halide Free, and are RoHS pliant
- 55 to °C +175
- Steady State
- Steady State (Note 2) RqJA