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NVMFS6H864NL Description

DATA SHEET .onsemi. MOSFET Power, Single N-Channel 80 V, 29 mW, 22 A V(BR)DSS 80 V RDS(ON) MAX 29 mW @ 10 V 38 mW @ 4.5 V ID MAX 22 A NVMFS6H864NL.

NVMFS6H864NL Key Features

  • Small Footprint (5x6 mm) for pact Design
  • Low RDS(on) to Minimize Conduction Losses
  • Low QG and Capacitance to Minimize Driver Losses
  • NVMFS6H864NLWF
  • Wettable Flank Option for Enhanced Optical
  • AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free and are RoHS pliant
  • 55 to °C +175
  • Steady State
  • Steady State (Note 2) RqJA