NVMFWS0D9N04XM Description
MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 0.9 mW, 273 A NVMFWS0D9N04XM.
NVMFWS0D9N04XM Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Small Footprint (5x6 mm) with pact Design
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS