NVMTS1D6N10MC Description
MOSFET - Power, Single N-Channel 100 V, 1.7 mW, 273 A NVMTS1D6N10MC.
NVMTS1D6N10MC Key Features
- Small Footprint (8x8 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- New Power 88 Package
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- 55 to °C + 175
- Steady State
- Steady State (Note 2) RqJA
- Rev. 0