NVMYS3D5N04C Description
NVMYS3D5N04C MOSFET Power, Single N-Channel 40 V, 3.3 mW, 102.
NVMYS3D5N04C Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- LFPAK4 Package, Industry Standard
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- 55 to °C +175
- Steady State
- Steady State (Note 2) RqJA
- Rev. 0