NVMYS4D6N06C Description
MOSFET - Power, Single N-Channel 60 V, 4.7 mW, 92 A NVMYS4D6N06C.
NVMYS4D6N06C Key Features
- Small Footprint (5x6 mm) for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- 55 to °C +175
- Steady State
- Steady State (Note 2) RqJA
- Rev. 0