Download UG4SC075005L8S Datasheet PDF
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UG4SC075005L8S Description

onsemi’s UG4SC075005L8S "bo-FET" integrates both a 750 V SiC JFET and a Low Voltage Si MOSFET into a single H-PDSO-F8 package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a...

UG4SC075005L8S Key Features

  • Single Digit RDS(on)
  • Normally-off Capability
  • Improved Speed Control
  • Improved Parallel Device Operation (3+ FETs)
  • Operating Temperature: 175 C (Max)
  • High Pulse Current Capability
  • Excellent Device Robustness
  • Silver-Sintered Die Attach for Excellent Thermal Resistance
  • Short Circuit Rated
  • This Device is Pb-Free, Halogen Free and is RoHS pliant