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OP770A - NPN Photo transistor

General Description

The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package.

The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity.

Key Features

  • Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited.

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Datasheet Details

Part number OP770A
Manufacturer OPTEK Technologies
File Size 127.36 KB
Description NPN Photo transistor
Datasheet download datasheet OP770A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Prod uct Bul le tin OP770A Feb ru ary 2000 NPN Phototransistor with Collector-Emitter Capacitor Types OP770A, OP770B, OP770C, OP770D Features • • • • Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40 ° C to +100° C Lead Soldering Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec .