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OP770D - NPN Photo transistor

Download the OP770D datasheet PDF. This datasheet also covers the OP770A variant, as both devices belong to the same npn photo transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package.

The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity.

Key Features

  • Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (OP770A_OPTEKTechnologies.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number OP770D
Manufacturer OPTEK Technologies
File Size 127.36 KB
Description NPN Photo transistor
Datasheet download datasheet OP770D Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Prod uct Bul le tin OP770A Feb ru ary 2000 NPN Phototransistor with Collector-Emitter Capacitor Types OP770A, OP770B, OP770C, OP770D Features • • • • Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40 ° C to +100° C Lead Soldering Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec .