OP770D
Overview
The OP770 consists of an NPN phototransistor and 1000 pF capacitor molded in a clear epoxy package. The internal collector-emitter capacitor allows the device to be used in applications where external high frequency emissions could compromise signal integrity.
- Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Notes: (1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec . max. when flow sol der ing. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.33 mW/° C above 25° C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lense surface of the phototransistor being tested. (4) To calculate typical collector dark current in µA, use the formula ICED = 10 (0.040T A-3.4) when TA is ambient temperature in °C.
