OPTO DIODE OD-50L
SUPER HIGH-POWER GaAlAs IR EMITTERS
| Part No. | OD-50L |
|---|---|
| Datasheet | OD-50L Download |
| Manufacturer | OPTO DIODE |
| Description | SUPER HIGH-POWER GaAlAs IR EMITTERS |
| Buy | Stock & Price |
FEATURES
● Ultra high power output● Four wire bonds on die corners
● Very narrow optical beam
● Standard 3-lead TO-39 hermetic package
● Chip size .030 x .030 inches OD-50L ANODE (CASE) GLASS DOME .250 .262 .357 .362 .100 .018 .324 .332 .200 .031 .025 .071 .095 .500 CATHODE .040 45° ELECTRO-OPTICAL CHARACTERISTICS AT 25°C PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time CE TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA MB E MIN 40 TYP 50 600 500 880 80 7 1.65 5 30 90 0.7 0.7 1000mW 500mA 10A 5V 260°C -55°C to 100°C 100°C 150°C/W Typical 60°C/W Typical R MAX UNITS mW mW/sr nm nm Deg 2 Volts Volts pF μsec μsec 750 Mitchell Road, Newbury Park, California 91320 Phone: (805) 499-0335, Fax: (805) 499-8108 Email: sales@optodiode.com, Website: RoHS