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SUPER HIGH-POWER GaAlAs IR EMITTERS
FEATURES • Ultra high power output • Four wire bonds on die corners • Very narrow optical beam • Standard 3-lead TO-39 hermetic package • Chip size .030 x .030 inches
OD-50L
ANODE (CASE) GLASS DOME .250 .262
.357 .362 .100
.018
.324 .332
.200 .031 .025 .071 .095 .500 CATHODE .040 45°
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS Total Power Output, Po Radiant Intensity, Ie Peak Emission Wavelength, λP Spectral Bandwidth at 50%, Δλ Half Intensity Beam Angle, θ Forward Voltage, VF Reverse Breakdown Voltage, VR Capacitance, C Rise Time Fall Time
CE
TEST CONDITIONS IF = 500mA IF = 10A IF = 500mA IF = 50mA
MB E
MIN 40 TYP 50 600 500 880 80 7 1.65 5 30 90 0.7 0.